? 2013 ixys corporation, all rights reserved ds100500a(04/13) high voltage power mosfet n-channel enhancement mode features z high blocking voltage z high voltage package advantages z easy to mount z space savings z high power density applications z high voltage power supplies z capacitor discharge applications z pulse circuits z laser and x-ray generation systems IXTT1N450HV symbol test conditions maximum ratings v dss t j = 25 c to 150 c 4500 v v dgr t j = 25 c to 150 c, r gs = 1m 4500 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c1a i dm t c = 25 c, pulse width limited by t jm 3a p d t c = 25 c 520 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c weight 4 g v dss = 4500v i d25 = 1a r ds(on) 85 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v gs(th) v ds = v gs , i d = 250 a 3.5 6.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = 3.6kv, v gs = 0v 10 a v ds = 4.5kv 50 a v ds = 3.6kv t j = 100 c 25 a r ds(on) v gs = 10v, i d = 50ma, note 1 85 g = gate d = drain s = source tab = drain to-268 (ixtt) g d (tab) s preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXTT1N450HV ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 50v, i d = 200ma, note 1 0.28 0.46 s c iss 1730 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 78 pf c rss 28 pf r gi gate input resistance 21 t d(on) 34 ns t r 60 ns t d(off) 58 ns t f 127 ns q g(on) 40 nc q gs v gs = 10v, v ds = 1kv, i d = 0.5 ? i d25 10 nc q gd 20 nc r thjc 0.24 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 1 a i sm repetitive, pulse width limited by t jm 5 a v sd i f = 1a, v gs = 0v, note 1 2.0 v t rr i f = 1a, -di/dt = 50a/ s, v r = 100v 1.75 s note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 500v, i d = 0.5 ? i d25 r g = 10 (external) to-268 (hv) outline pins: 1 - gate 2 - source 3 - drain prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2013 ixys corporation, all rights reserved IXTT1N450HV fig. 2. extended output characteristics @ t j = 25oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 250 300 v ds - volts i d - amperes v gs = 10 v 8 v 6 v 7 v 6.5 v fig. 3. output characteristics @ t j = 125oc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 140 160 v ds - volts i d - amperes v gs = 10 v 7 v 6 v 5 v fig. 4. r ds(on) normalized to i d = 0.5a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10 v i d = 0.5 a i d = 1 a fig. 5. r ds(on) normalized to i d = 0.5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 i d - amperes r ds(on) - normalized v gs = 10 v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0.0 0.2 0.4 0.6 0.8 1.0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 1. output characteristics @ t j = 25oc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1020304050607080 v ds - volts i d - amperes v gs = 10 v 9 v 7 v 6 v 8 v
ixys reserves the right to change limits, test conditions, and dimensions. IXTT1N450HV fig. 7. input admittance 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 q g - nanocoulombs v gs - volts v ds = 1000v i d = 500ma i g = 1ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2013 ixys corporation, all rights reserved ixys ref: t_1n450(h7)10-09-12 IXTT1N450HV fig. 14. forward-bias safe operating area @ t c = 75oc 0.01 0.1 1 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 100ms 1ms 100s r ds(on) limit 10ms dc 25s fig. 13. forward-bias safe operating area @ t c = 25oc 0.01 0.1 1 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100ms 1ms 100s r ds(on) limit 10ms dc 25s
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